to ? 92 1.emitter 2.base 3.collect or jiangsu changjiang elec tron ics technology co., ltd to -92 plastic-encapsulate transistors MPS750 transist or (pnp) features z general purpose amplifier maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c = -0.1ma,i e =0 -60 v collecto r-emitter breakdown voltage v (br)ce o * i c =- 10ma,i b =0 -40 v emitter-ba se breakdown voltage v (br )ebo i e =- 0.01ma,i c =0 -5 v collecto r cut-off current i cbo v cb =- 60v,i e =0 -0 .1 a emitter cut-off current i ebo v eb =-4v ,i c =0 -0 .1 a h fe(1) * v ce =-2v , i c =- 50ma 75 h fe(2) * v ce =-2v , i c =- 500ma 75 400 h fe(3) * v ce =-2v , i c =- 1a 75 dc curr ent gain h fe(4) * v ce =-2v , i c =- 2a 40 v ce(sa t) (1) * i c =-2a ,i b =-200ma -0.5 v collecto r-emitter saturation voltage v ce(sa t) (2) * i c =-1a ,i b =-100ma -0.3 v base -emitter saturation voltage v be(sat) * i c =-1a ,i b =-100ma -1.2 v base-emitter vo ltage v be * i c =-1a , v ce =-2v -1.0 v tr ansition frequency f t v ce =-5v ,i c =- 50ma,f=100mhz 75 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-bas e voltage -60 v v ceo collector-emitter v oltage -40 v v ebo emitter-base vo ltage -5 v i c collector curr ent -continuous -2 a p c collector po wer dissipation 625 mw r ja thermal resist ance from junction to ambient 200 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 b,jan,2015
min max min max a 3.300 3.700 0.130 0 .146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0 .135 e 4.300 4 .700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com , jan,201 5
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